| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 200 V |
| Current Rating | 67.0 A |
| Case/Package | TO-247-3 |
| Power Dissipation | 370 W |
| Input Capacitance | 6.12 nF |
| Gate Charge | 225 nC |
| Drain to Source Voltage (Vds) | 200 V |
| Continuous Drain Current (Ids) | 67.0 A |
| Rise Time | 21 ns |
| Input Capacitance (Ciss) | 6120pF @25V(Vds) |
| Input Power (Max) | 370 W |
| Fall Time | 10 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 370W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Make an effective common gate amplifier using this APT20M38BVRG power MOSFET from Microsemi. Its maximum power dissipation is 370000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with power mos v technology.
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