| TYPE | DESCRIPTION |
|---|
| Mounting Style | Screw |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | 1.00 kV |
| Current Rating | 25.0 A |
| Case/Package | SOT-227-4 |
| Polarity | N-CH |
| Power Dissipation | 545 W |
| Input Capacitance | 9.84 nF |
| Gate Charge | 305 nC |
| Drain to Source Voltage (Vds) | 1000 V |
| Continuous Drain Current (Ids) | 25.0 A |
| Rise Time | 40 ns |
| Input Capacitance (Ciss) | 9835pF @25V(Vds) |
| Fall Time | 38 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 545W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Create an effective common drain amplifier using this APT25M100J power MOSFET from Microsemi. Its maximum power dissipation is 545000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
Microsemi
4 Pages / 0.2 MByte
Microsemi
5 Pages / 0.2 MByte
Microsemi
40 Pages / 4.07 MByte
Microchip
MOSFET N-CH 1000V 25A SOT-227
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