TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 1.00 kV |
Current Rating | 37.0 A |
Case/Package | TO-264-3 |
Polarity | N-CH |
Power Dissipation | 1135 W |
Input Capacitance | 9.84 nF |
Gate Charge | 305 nC |
Drain to Source Voltage (Vds) | 1.00 kV |
Continuous Drain Current (Ids) | 37.0 A |
Rise Time | 40 ns |
Input Capacitance (Ciss) | 9835pF @25V(Vds) |
Fall Time | 38 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 1135W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Material | Silicon |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
This APT37M100L power MOSFET from Microsemi can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 1135000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
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