| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Dissipation | 500000 mW |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Input Power (Max) | 500 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 500000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The APT40GR120B2D30 IGBT transistor from Microsemi is perfect to use as an electronic switch eliminating the current at the gate. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 500000 mW. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
Microsemi
1 Pages / 0.01 MByte
Microsemi
12 Pages / 1.03 MByte
Microsemi
8 Pages / 0.16 MByte
Microsemi
Trans IGBT Chip N-CH 1200V 88A 500000mW 3Pin(3+Tab) T-MAX
Microsemi
Trans IGBT Chip N-CH 1200V 88A 500000mW 3Pin(3+Tab) TO-247
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