| TYPE | DESCRIPTION |
|---|
| Mounting Style | Screw |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | 1.20 kV |
| Current Rating | 75.0 A |
| Case/Package | SOT-227 |
| Power Dissipation | 329000 mW |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Input Capacitance (Cies) | 4nF @25V |
| Input Power (Max) | 329 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 329000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
This APT45GP120JDQ2 IGBT transistor from Microsemi is perfect if your circuit contains high currents passing through it. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 329000 mW. It is made in a single dual emitter configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
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