| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 1.20 kV |
| Current Rating | 134 A |
| Case/Package | TO-264-3 |
| Power Dissipation | 543 W |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Input Power (Max) | 543 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 543000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 26.49 mm |
| Size-Width | 20.5 mm |
| Size-Height | 5.21 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
This powerful and secure APT50GN120L2DQ2G IGBT transistor from Microsemi will make sure your circuit works properly. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 543000 mW. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
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Trans IGBT Chip N-CH 1200V 134A 543000mW 3Pin(3+Tab) TO-264 MAX
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