| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 107 A |
| Case/Package | TO-247-3 |
| Power Dissipation | 366 W |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Input Power (Max) | 366 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 366000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 21.46 mm |
| Size-Width | 16.26 mm |
| Size-Height | 5.31 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
This APT50GN60BG IGBT transistor from Microsemi is an electronic switch that can handle large currents with very little gate current drive. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 366000 mW. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. It is made in a single configuration.
Microsemi
6 Pages / 0.29 MByte
Microsemi
12 Pages / 1.03 MByte
Microsemi
6 Pages / 0.12 MByte
Microsemi
40 Pages / 4.07 MByte
Microsemi
Trans IGBT Chip N-CH 600V 107A 366000mW 3Pin(3+Tab) TO-247
Microsemi
Trans IGBT Chip N-CH 600V 107A 366000mW 3Pin(3+Tab) TO-247
Microsemi
IGBT w/ anti-parallel diodeY
APT
IGBT 600V 107A 366W TO247
Microchip
IGBT 600V 107A 366W TO247
Microchip
IGBT 600V 107A 366W TO247
Microsemi
IGBT w/ anti-parallel diodeP
Microsemi
IGBT w/ anti-parallel diodeP
Microsemi
IGBT w/o anti-parallel diode
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
