| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Dissipation | 416000 mW |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Input Power (Max) | 416 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 416000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
This APT54GA60BD30 IGBT transistor from Microsemi is an electronic switch that can handle large currents with very little gate current drive. Its maximum power dissipation is 416000 mW. It has a maximum collector emitter voltage of 600 V. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
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