| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 38.0 A |
| Case/Package | TO-264 |
| Polarity | N-CH |
| Power Dissipation | 520 W |
| Input Capacitance | 9.00 nF |
| Gate Charge | 475 nC |
| Drain to Source Voltage (Vds) | 600 V |
| Continuous Drain Current (Ids) | 38.0 A |
| Rise Time | 13 ns |
| Input Capacitance (Ciss) | 7500pF @25V(Vds) |
| Fall Time | 5 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 520000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Microsemi"s APT6015LVRG power MOSFET can provide a solution. Its maximum power dissipation is 520000 mW. This N channel MOSFET transistor operates in enhancement mode. This device is made with power mos v technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
Microsemi
1 Pages / 0.48 MByte
Microsemi
5 Pages / 0.23 MByte
Microchip
MOSFET FG, MOSFET, 600V, TO-264, RoHS
Advanced Power Technology
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