| TYPE | DESCRIPTION |
|---|
| Mounting Style | Chassis |
| Number of Pins | 4 Pin |
| Case/Package | SOT-227-4 |
| Power Dissipation | 356 W |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Input Capacitance (Cies) | 8.01nF @25V |
| Input Power (Max) | 356 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 356000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 38.2 mm |
| Size-Width | 25.4 mm |
| Size-Height | 9.6 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
This APT60GA60JD60 IGBT transistor from Microsemi is perfect if your circuit contains high currents passing through it. Its maximum power dissipation is 356000 mW. It has a maximum collector emitter voltage of 600 V. It is made in a single dual emitter configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
Microsemi
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Microsemi
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Microsemi
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Microsemi
Trans IGBT Chip N-CH 600V 112A 356000mW 4Pin SOT-227
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