| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 1.20 kV |
| Current Rating | 100 A |
| Case/Package | TO-247-3 |
| Power Dissipation | 1.042 kW |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Input Power (Max) | 1042 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1042000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 21.46 mm |
| Size-Width | 16.26 mm |
| Size-Height | 5.31 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
You won"t need to worry about any lagging in your circuit with this APT75GP120B2G IGBT transistor from Microsemi. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 1042000 mW. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
Microsemi
6 Pages / 0.1 MByte
Microsemi
12 Pages / 1.03 MByte
Microsemi
6 Pages / 0.09 MByte
Microsemi
40 Pages / 4.07 MByte
Advanced Power Technology
Microsemi
APT75GP120B2G Single 1200V 100A 1042W 320NC POWER MOS 7® IGBT - TO-247-3
Microchip
IGBT 1200V 100A 1042W TMAX
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
