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APT75GT120JRDQ3
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APT75GT120JRDQ3 Datasheet PDF - Microsemi

Manufacturer:Microsemi
Category:IGBTs
Case Package:SOT-227-4
Description:Trans IGBT Module N-CH 1200V 97A 480000mW 4Pin SOT-227
Documentation:APT75GT120JRDQ3 Datasheet (9 Pages)Package Outline Dimension on9 Page
APT75GT120JRDQ3 User Reference Manual Guide (12 Pages)
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APT75GT120JRDQ3 Datasheet PDF (9 Pages)
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APT75GT120JRDQ3 Specifications

TYPEDESCRIPTION
Mounting StyleChassis
Number of Pins4 Pin
Case/PackageSOT-227-4
Power Dissipation480000 mW
Breakdown Voltage (Collector to Emitter)1200 V
Input Capacitance (Cies)5.1nF @25V
Input Power (Max)480 W
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)480000 mW
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APT75GT120JRDQ3 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTube
Operating Temperature-55℃ ~ 150℃ (TJ)
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APT75GT120JRDQ3 Documents

APT75GT120JRDQ3 Datasheet
Microsemi
9 Pages / 0.45 MByte
APT75GT120JRDQ3 User Reference Manual Guide
Microsemi
12 Pages / 1.03 MByte
APT75GT120JRDQ3 Other Datasheet PDF
Microsemi
9 Pages / 0.18 MByte
APT75GT120JRDQ3 Product Catalog
Microsemi
40 Pages / 4.07 MByte

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Microsemi
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APT75GT120JU3 Datasheet PDF
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Trans IGBT Module N-CH 1200V 100A 416000mW 4Pin SOT-227
APT75GT120JU2 Datasheet PDF
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IGBT MOD 1200V 100A 416W SOT227
APT75GT120JRDQ3 Datasheet PDF
Microchip
IGBT MOD 1200V 97A 480W ISOTOP
APT75GT120JU3 Datasheet PDF
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IGBT MOD 1200V 100A 416W SOT227
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