| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 1.20 kV |
| Current Rating | 7.10 A |
| Case/Package | TO-247-3 |
| Polarity | N-CH |
| Power Dissipation | 335 W |
| Input Capacitance | 2.57 nF |
| Gate Charge | 80.0 nC |
| Drain to Source Voltage (Vds) | 1200 V |
| Continuous Drain Current (Ids) | 7.00 A |
| Rise Time | 8 ns |
| Input Capacitance (Ciss) | 2565pF @25V(Vds) |
| Input Power (Max) | 335 W |
| Fall Time | 13 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 335W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
In addition to amplifying electronic signals, you"ll be able to switch between various lines with the APT7M120B power MOSFET, developed by Microsemi. Its maximum power dissipation is 335000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
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