| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-264-3 |
| Power Dissipation | 625000 mW |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 22 ns |
| Input Power (Max) | 625 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 625000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
This powerful and secure APT80GA60LD40 IGBT transistor from Microsemi will make sure your circuit works properly. Its maximum power dissipation is 625000 mW. It has a maximum collector emitter voltage of 600 V. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
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