TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-247-3 |
Polarity | N-CH |
Power Dissipation | 833 W |
Drain to Source Voltage (Vds) | 650 V |
Continuous Drain Current (Ids) | 94A |
Rise Time | 59 ns |
Input Capacitance (Ciss) | 13940pF @25V(Vds) |
Input Power (Max) | 833 W |
Fall Time | 167 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 833W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Amplify electronic signals and switch between them with the help of Microsemi"s APT94N65B2C3G power MOSFET. Its maximum power dissipation is 415000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
Microsemi
5 Pages / 0.14 MByte
Microsemi
5 Pages / 0.23 MByte
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