| TYPE | DESCRIPTION |
|---|
| Mounting Style | Screw |
| Number of Pins | 20 Pin |
| Case/Package | SP-4 |
| Power Dissipation | 500000 mW |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Input Capacitance (Cies) | 5.1nF @25V |
| Input Power (Max) | 500 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 500000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
This APTGF75H120TG infineon IGBT module from Microsemi will handle large currents with little seepage. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 500000 mW. This IGBT driver board has a minimum operating temperature of -40 °C and a maximum of 150 °C. It is made in a quad configuration.
Microsemi
5 Pages / 0.18 MByte
Microsemi
44 Pages / 2.7 MByte
Microsemi
40 Pages / 4.07 MByte
Microsemi
Trans IGBT Module N-CH 1200V 100A 500000mW 20Pin Case SP-4
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