| TYPE | DESCRIPTION |
|---|
| Mounting Style | Screw |
| Number of Pins | 12 Pin |
| Case/Package | SP-1 |
| Power Dissipation | 312 W |
| Breakdown Voltage (Collector to Emitter) | 1700 V |
| Input Capacitance (Cies) | 4.4nF @25V |
| Input Power (Max) | 312 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 312000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 51.6 mm |
| Size-Width | 40.8 mm |
| Size-Height | 11.5 mm |
| Operating Temperature | -40℃ ~ 150℃ (TJ) |
Even with large currents this APTGT50SK170T1G infineon IGBT module from Microsemi will work in your circuit. Its maximum power dissipation is 312000 mW. It has a maximum collector emitter voltage of 1700 V. It is made in a single configuration. This IGBT driver board has a minimum operating temperature of -40 °C and a maximum of 150 °C.
Microsemi
4 Pages / 0.39 MByte
Microsemi
6 Pages / 0.43 MByte
Microsemi
40 Pages / 4.07 MByte
Microsemi
Trans IGBT Module N-CH 1700V 75A 312000mW 12Pin Case SP-1
Microchip
IGBT MODULE 1700V 75A 312W SP1
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