| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 81.36 MHz |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Dissipation | 165000 mW |
| Breakdown Voltage (Drain to Source) | 450V (min) |
| Rise Time | 3.1 ns |
| Output Power | 90 W |
| Gain | 13 dB |
| Input Capacitance (Ciss) | 980pF @150V(Vds) |
| Fall Time | 3 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 165000 mW |
| Voltage Rating | 450 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Height | 21.46 mm |
Microsemi offers the perfect solution for amplifying and switching electronic signals in a radio frequency environment with this ARF449AG RF amplifier. Its maximum power dissipation is 165000 mW. This RF power MOSFET has an operating temperature range of -55 °C to 150 °C. This N channel RF power MOSFET operates in enhancement mode. Its maximum frequency is 120 MHz.
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