| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 81.36 MHz |
| Number of Pins | 3 Pin |
| Current Rating | 9 A |
| Case/Package | TO-247-3 |
| Power Dissipation | 165000 mW |
| Drain to Source Voltage (Vds) | 450 V |
| Breakdown Voltage (Drain to Source) | 450V (min) |
| Rise Time | 3.1 ns |
| Output Power | 90 W |
| Gain | 13 dB |
| Input Capacitance (Ciss) | 980pF @150V(Vds) |
| Fall Time | 3 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 165000 mW |
| Voltage Rating | 450 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Rail, Tube |
| Size-Height | 21.46 mm |
Amplifying and switching electronic signals in radio frequency environments is easy with this ARF449BG RF amplifier from Microsemi. Its maximum power dissipation is 165000 mW. Its maximum frequency is 120 MHz. This N channel RF power MOSFET operates in enhancement mode. This RF power MOSFET has a minimum operating temperature of -55 °C and a maximum of 150 °C.
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