| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 40.68 MHz |
| Number of Pins | 3 Pin |
| Current Rating | 14 A |
| Case/Package | TO-247-3 |
| Power Dissipation | 250 W |
| Threshold Voltage | 5 V |
| Breakdown Voltage (Drain to Source) | 500 V |
| Rise Time | 6 ns |
| Output Power | 150 W |
| Gain | 15 dB |
| Test Current | 50 mA |
| Input Capacitance (Ciss) | 1200pF @150V(Vds) |
| Fall Time | 4 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 250000 mW |
| Voltage Rating | 500 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | 55℃ ~ 150℃ |
Using semiconductor technology, this ARF460AG RF amplifier from Microsemi operates at high frequencies to amplify or switch electronic signals and electrical power. Its maximum power dissipation is 250000 mW. Its maximum frequency is 65 MHz. This RF power MOSFET has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel RF power MOSFET operates in enhancement mode.
Microsemi
4 Pages / 0.13 MByte
Microsemi
5 Pages / 0.19 MByte
Microsemi
Trans RF MOSFET N-CH 500V 14A 3Pin(3+Tab) TO-247
Microsemi
Trans RF MOSFET N-CH 500V 14A 3Pin(3+Tab) TO-247
Microchip
FET RF N-CH 500V 14A TO247
Microchip
FET RF N-CH 500V 14A TO247
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