| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 40.68 MHz |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Dissipation | 250000 mW |
| Breakdown Voltage (Drain to Source) | 500V (min) |
| Rise Time | 6 ns |
| Output Power | 150 W |
| Gain | 15 dB |
| Test Current | 50 mA |
| Input Capacitance (Ciss) | 1200pF @150V(Vds) |
| Fall Time | 4 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 250000 mW |
| Voltage Rating | 500 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
By using a combination of metal-oxide-semiconductor technology, this ARF460BG RF amplifier from Microsemi can be implemented in an electronic circuit as a switching device. Its maximum power dissipation is 250000 mW. Its maximum frequency is 65 MHz. This N channel RF power MOSFET operates in enhancement mode. This RF power MOSFET has an operating temperature range of -55 °C to 150 °C.
Microsemi
4 Pages / 0.13 MByte
Microsemi
5 Pages / 0.19 MByte
Microsemi
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Microsemi
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Microchip
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