Description
●The AT25DF641 is a serial interface Flash memory device designed for use in a wide variety of high-volume consumer based applications in which program code is shad owed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the AT25DF641, with its erase granularity as small as 4-Kbytes, makes it ideal for data storage as well, eliminating the need for additional data storage EEPROM devices.
●Features
●• Single 2.7V - 3.6V Supply
●• Serial Peripheral Interface (SPI) Compatible
● – Supports SPI Modes 0 and 3
● – Supports RapidS® Operation
● – Supports Dual-Input Program and Dual-Output Read
●• Very High Operating Frequencies
● – 100 MHz for RapidS
● – 85 MHz for SPI
● – Clock-to-Output (tV) of 5 ns Maximum
●• Flexible, Optimized Erase Architecture for Code + Data Storage Applications
● – Uniform 4-Kbyte Block Erase
● – Uniform 32-Kbyte Block Erase
● – Uniform 64-Kbyte Block Erase
● – Full Chip Erase
●• Individual Sector Protection with Global Protect/Unprotect Feature
● – 128 Sectors of 64-Kbytes Each
●• Hardware Controlled Locking of Protected Sectors via WP Pin
●• Sector Lockdown
● – Make Any Combination of 64-Kbyte Sectors Permanently Read-Only
●• 128-Byte Programmable OTP Security Register
●• Flexible Programming
● – Byte/Page Program (1 to 256 Bytes)
●• Fast Program and Erase Times
● – 1.0 ms Typical Page Program (256 Bytes) Time
● – 50 ms Typical 4-Kbyte Block Erase Time
● – 250 ms Typical 32-Kbyte Block Erase Time
● – 400 ms Typical 64-Kbyte Block Erase Time
●• Program and Erase Suspend/Resume
●• Automatic Checking and Reporting of Erase/Program Failures
●• Software Controlled Reset
●• JEDEC Standard Manufacturer and Device ID Read Methodology
●• Low Power Dissipation
● – 5 mA Active Read Current (Typical at 20 MHz)
● – 5 µA Deep Power-Down Current (Typical)
●• Endurance: 100,000 Program/Erase Cycles
●• Data Retention: 20 Years
●• Complies with Full Industrial Temperature Range
●• Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options
● – 16-Lead SOIC (300-mil wide)
● – 8-Contact Very Thin DFN (6 x 8 mm)
