| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Supply Voltage (DC) | 1.65V (min) |
| Operating Voltage | 1.65V ~ 3.6V |
| Case/Package | SOIC-8 |
| Supply Current | 15 mA |
| Number of Positions | 8 Position |
| Clock Speed | 85 MHz |
| Number of Bits | 8 Bit |
| Memory Size | 500000 B |
| Access Time(Max) | 7 ns |
| Operating Temperature (Max) | 85 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Supply Voltage | 1.65V ~ 3.6V |
| Supply Voltage (Max) | 3.6 V |
| Supply Voltage (Min) | 1.65 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
| Size-Length | 5.4 mm |
| Size-Width | 5.35 mm |
| Size-Height | 1.91 mm |
| Operating Temperature | -40℃ ~ 85℃ |
The AT45DB041E-SHN-B is a 1.65V minimum, serial-interface sequential access Flash Memory ideally suited for a wide variety of digital voice, image, program code and data storage applications. This also supports the RapidS serial interface for applications requiring very high speed operation. Its 4194304-bit of memory are organized as 2048 pages of 256 or 264 bytes each. In addition to the main memory, the memory also contains two SRAM buffers of 256/264 bytes each. The buffers allow receiving of data while a page in the main memory is being reprogrammed. Interleaving between both buffers can dramatically increase a systems ability to write a continuous data stream. In addition the SRAM buffers can be used as additional system scratch pad memory and E2 PROM emulation (bit or byte alterability) can be easily handled with a self-contained three step read-modify-write operation.
● Continuous read capability through entire array
● Two fully independent SRAM data buffers
● Program and erase suspend/resume
● 100000 Program/erase cycles per page minimum endurance
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