TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Frequency | 0.25 MHz |
Number of Pins | 8 Pin |
Supply Voltage (DC) | 1.80V (min) |
Case/Package | SOIC-8 |
Supply Current | 2 mA |
Number of Positions | 8 Position |
Clock Speed | 2 MHz |
Memory Size | 125 B |
Operating Temperature (Max) | 85 ℃ |
Operating Temperature (Min) | -40 ℃ |
Supply Voltage | 1.8V ~ 5.5V |
Supply Voltage (Max) | 5.5 V |
Supply Voltage (Min) | 1.8 V |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Packaging | Bulk |
Size-Length | 5 mm |
Size-Width | 3.99 mm |
Size-Height | 1.5 mm |
Operating Temperature | -40℃ ~ 85℃ (TA) |
The AT93C46EN-SH-B is a MICROWIRE-compatible 1kB 3-wire serial Electrically Erasable Programmable Read-Only Memory (EEPROM) organized as 64 words of 16-bit each. The device is optimized for use in many industrial and commercial applications where low-power and low-voltage operation are essential. The AT93C46E is enabled through the chip select pin (CS) and accessed via a 3-wire serial interface consisting of data input (DI), data output (DO) and shift clock (SK). Upon receiving a read instruction at DI, the address is decoded and the data is clocked out serially on the data output DO pin. The write cycle is completely self-timed and no separate erase cycle is required before write. The write cycle is only enabled when the part is in the erase/write enable state. When CS is brought high following the initiation of a write cycle, the DO pin outputs the ready/busy status of the part.
● Low and standard-voltage operation
● User-selectable internal organization
● 2MHz Clock rate (5V)
● Self-timed write cycle (5ms maximum)
● High reliability
● Endurance - 1000000 write cycles
● Data retention - 100 years
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