TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 7 Pin |
Case/Package | TO-252-3 |
Power Rating | 300 W |
Number of Positions | 7 Position |
Polarity | N-CH |
Power Dissipation | 300 W |
Threshold Voltage | 2 V |
Drain to Source Voltage (Vds) | 24 V |
Continuous Drain Current (Ids) | 429A |
Rise Time | 240 ns |
Input Capacitance (Ciss) | 7700pF @19V(Vds) |
Fall Time | 93 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 300000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Rail, Tube |
Material | Silicon |
Size-Length | 10.35 mm |
Size-Width | 6.22 mm |
Size-Height | 4.55 mm |
Operating Temperature | -55℃ ~ 175℃ |
The AUIRF1324S-7P is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device.
● Advanced process technology
● Repetitive avalanche allowed up to Tjmax
Infineon
12 Pages / 0.25 MByte
Infineon
28 Pages / 4.06 MByte
Infineon
35 Pages / 2.04 MByte
International Rectifier
Trans MOSFET N-CH 24V 429A Automotive 7Pin(6+Tab) D2PAK Tube
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