| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Power Rating | 160 W |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.014 Ω |
| Polarity | N-CH |
| Power Dissipation | 160 W |
| Threshold Voltage | 2 V |
| Drain to Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Ids) | 59A |
| Rise Time | 77 ns |
| Input Capacitance (Ciss) | 2900pF @25V(Vds) |
| Fall Time | 56 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 160W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.67 mm |
| Size-Width | 11.3 mm |
| Size-Height | 4.83 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The AUIRF3710ZS is a 100V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. It features combine to make this design an extremely efficient and reliable device for wide variety of applications.
● Low on-resistance
● Fully avalanche rated
● Repetitive avalanche allowed up to Tjmax
● Automotive qualified
● 175°C Operating temperature
Infineon
14 Pages / 0.34 MByte
Infineon
22 Pages / 0.35 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
35 Pages / 2.04 MByte
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