| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Power Rating | 2.4 W |
| Number of Channels | 2 Channel |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.043 Ω |
| Polarity | Dual N-Channel |
| Power Dissipation | 2.4 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 55 V |
| Continuous Drain Current (Ids) | 5.1A |
| Rise Time | 7.7 ns |
| Input Capacitance (Ciss) | 780pF @25V(Vds) |
| Input Power (Max) | 2.4 W |
| Fall Time | 12.5 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2400 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Width | 4 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
Benefits:
● Advanced planar technology
● Dynamic dV/dT rating
● 175°C operating temperature
● Fast switching
● Fully Avalanche Rated
● Repetitive avalanche allowed up to Tjmax
● Lead free, RoHS compliant
● Automotive qualified
Infineon
10 Pages / 0.41 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
25 Pages / 0.26 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
35 Pages / 2.04 MByte
Infineon
5 Pages / 0.32 MByte
International Rectifier
Transistor: N-MOSFET x2; unipolar; 55V; 5.1A; 2.4W; SO8
International Rectifier
Trans MOSFET N-CH 55V 5.1A Automotive 8Pin SOIC T/R
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