| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 9 Pin |
| Case/Package | DirectFET-L8 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 1.1 mΩ |
| Polarity | N-CH |
| Power Dissipation | 341 W |
| Threshold Voltage | 2 V |
| Drain to Source Voltage (Vds) | 60 V |
| Breakdown Voltage (Drain to Source) | 60 V |
| Continuous Drain Current (Ids) | 36A |
| Rise Time | 149 ns |
| Input Capacitance (Ciss) | 10655pF @25V(Vds) |
| Fall Time | 88 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Power Dissipation (Max) | 3.8W (Ta), 341W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 9.15 mm |
| Size-Width | 7.1 mm |
| Size-Height | 0.74 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
Benefits:
● Advanced Process Technology
● Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications
● Exceptionally Small Footprint and Low Profile
● High Power Density
● Low Parasitic Parameters
● Dual Sided Cooling
● 175°C Operating Temperature
● Repetitive Avalanche Allowed up to Tjmax
● Lead Free, RoHS Compliant and Halogen Free
● Automotive Qualified
Infineon
12 Pages / 0.49 MByte
Infineon
35 Pages / 2.04 MByte
Infineon
60V Single N-Channel HEXFET Power MOSFET in a DirectFET L8 package
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