| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 15 Pin |
| Case/Package | DirectFET-L8 |
| Number of Channels | 1 Channel |
| Number of Positions | 15 Position |
| Drain to Source Resistance (on) (Rds) | 0.0028 Ω |
| Polarity | N-Channel |
| Power Dissipation | 125 W |
| Threshold Voltage | 2.7 V |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Continuous Drain Current (Ids) | 20A |
| Rise Time | 32 ns |
| Input Capacitance (Ciss) | 11560pF @25V(Vds) |
| Fall Time | 41 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Power Dissipation (Max) | 3.3W (Ta), 125W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 9.15 mm |
| Size-Width | 7.1 mm |
| Size-Height | 0.74 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
100V, 124A, 3.5MOHM, N-CH, AUTOMOTIVE, DIRECTFET
Infineon
11 Pages / 0.43 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
35 Pages / 2.04 MByte
Infineon
A 100V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET L8 package rated at 124 amperes optimized with low on resistance
International Rectifier
Trans MOSFET N-CH Si 100V 20A Automotive T/R
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