TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220-3 |
Power Rating | 375 W |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.001 Ω |
Polarity | N-Channel |
Power Dissipation | 375 W |
Threshold Voltage | 3.9 V |
Drain to Source Voltage (Vds) | 40 V |
Continuous Drain Current (Ids) | 409A |
Rise Time | 105 ns |
Input Capacitance (Ciss) | 14240pF @25V(Vds) |
Fall Time | 100 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 375W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Rail, Tube |
Size-Length | 10.67 mm |
Size-Width | 3.43 mm |
Size-Height | 9.02 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
The AUIRFB8409 is a 40V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. It features combine to make this design an extremely efficient and reliable device for wide variety of applications.
● Advanced process technology
● New ultra low on-resistance
● Repetitive avalanche allowed up to Tjmax
● Automotive qualified
● 175°C Operating temperature
●ESD sensitive device, take proper precaution while handling the device.
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