| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 7 Pin |
| Case/Package | TO-263-7 |
| Power Rating | 375 W |
| Number of Channels | 1 Channel |
| Number of Positions | 7 Position |
| Drain to Source Resistance (on) (Rds) | 0.00055 Ω |
| Polarity | N-CH |
| Power Dissipation | 375 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 40 V |
| Continuous Drain Current (Ids) | 522A |
| Rise Time | 148 ns |
| Input Capacitance (Ciss) | 13975pF @25V(Vds) |
| Fall Time | 107 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 375W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 10.67 mm |
| Size-Width | 9.65 mm |
| Size-Height | 4.83 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The AUIRFS8409-7P is a N-channel HEXFET® Power MOSFET. This HEXFET® power MOSFET utilizes latest processing techniques to achieve the lowest possible on-resistance per silicon area.
● Advanced Process Technology
● New Ultra Low On-Resistance
● Fast Switching
Infineon
12 Pages / 0.27 MByte
Infineon
28 Pages / 4.06 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
35 Pages / 2.04 MByte
Infineon
2 Pages / 0.12 MByte
International Rectifier
MOSFET Auto 40V N-Ch FET 0.97mOhm 195A
International Rectifier
MOSFET Auto 40V N-Ch FET 0.97mOhm 195A
International Rectifier
MOSFET Auto 40V N-Ch FET 0.97mOhm 195A
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