| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Drain to Source Resistance (on) (Rds) | 0.011 Ω |
| Polarity | N-Channel |
| Power Dissipation | 140 W |
| Part Family | AUIRLR3110Z |
| Threshold Voltage | 1 V |
| Drain to Source Voltage (Vds) | 100 V |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Rail, Tube |
| Operating Temperature | -55℃ ~ 175℃ |
●Automotive N-Channel Power MOSFET, Infineon
●Infineon"s comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
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