| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Drain to Source Resistance (on) (Rds) | 0.011 Ω |
| Polarity | N-Channel |
| Power Dissipation | 80 W |
| Threshold Voltage | 1 V |
| Drain to Source Voltage (Vds) | 55 V |
| Rise Time | 160 ns |
| Input Capacitance (Ciss) | 1620pF @25V(Vds) |
| Fall Time | 42 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 80 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Size-Length | 10.67 mm |
| Size-Width | 4.83 mm |
| Size-Height | 9.65 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
●Automotive N-Channel Power MOSFET, Infineon
●Infineon"s comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon
12 Pages / 0.21 MByte
Infineon
2 Pages / 0.03 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
2 Pages / 0.03 MByte
International Rectifier
Trans MOSFET N-CH 55V 51A Automotive 3Pin(3+Tab) TO-220AB Tube
International Rectifier
AUIRLZ44ZL N-channel MOSFET Transistor, 51A, 55V, 3Pin TO-262
International Rectifier
MOSFET N-Channel 55V 51A TO220AB
Infineon
MOSFET N-CH 55V 51A D2PAK
International Rectifier
MOSFET AUTO 55V 1 N-CH HEXFET 13.5mOhms
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
