| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 2 Pin |
| Capacitance | 0.35 pF |
| Case/Package | SOD-523-2 |
| Forward Voltage | 1.1 V |
| Power Dissipation | 0.25 W |
| Forward Current | 100 mA |
| Reverse Breakdown Voltage | 150 V |
| Maximum Forward Voltage (Max) | 1.1 V |
| Forward Current (Max) | 100 mA |
| Operating Temperature (Max) | 125 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 250 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
| Size-Length | 1.2 mm |
| Size-Width | 0.8 mm |
| Size-Height | 0.55 mm |
| Operating Temperature | 150℃ (TJ) |
The BAR 64-02V H6327 is a Silicon PIN Diode with single configuration. It has high voltage current controlled RF resistor for RF attenuator and switches. It is suitable for frequency range above 1MHz up to 6GHz.
● Very low capacitance at zero volt reverse bias at frequencies above 1GHz (0.17pF)
● Low forward resistance (2.1R at 10mA)
● Very low signal distortion
● -55 to 125°C Operating temperature range
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