TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | SOT-23-3 |
Forward Voltage | 1.25 V |
Reverse recovery time | 1.5 µs |
Forward Current | 250 mA |
Max Forward Surge Current (Ifsm) | 4.5 A |
Maximum Forward Voltage (Max) | 1.25 V |
Operating Temperature (Max) | 150 ℃ |
TYPE | DESCRIPTION |
---|
Packaging | Cut Tape (CT) |
Size-Length | 2.9 mm |
Size-Width | 1.3 mm |
Size-Height | 1 mm |
Operating Temperature | -65℃ ~ 150℃ |
The BAS 116 E6327 is a silicon Low Leakage Diode feature medium speed switching times.
● 370mW Total power dissipation
● 85V Breakdown voltage
● 2pF Capacitance
●Due to technical requirements, components may contain dangerous substances.
Infineon
6 Pages / 0.06 MByte
Infineon
7 Pages / 0.17 MByte
Infineon
Rectifier Diode, 1Element, 0.25A, 85V V(RRM), Silicon, SOT-23, 3Pin
NXP
NXP BAS116 Small Signal Diode, Single, 85V, 215mA, 1.25V, 3µs, 4A
Nexperia
Small Signal Diode, Single, 85V, 215mA, 1.25V, 3µs, 4A
Taiwan Semiconductor
TAIWAN SEMICONDUCTOR BAS116 Small Signal Diode, Single, 85V, 215mA, 1.25V, 3µs, 4.5A
Multicomp
DIODE, HIGH SPEED, SOT-23; Diode Type: Small Signal; Voltage, Vrrm: 85V; Current, If AV: 215mA; Current, Ifsm: 0.5A; ...
Vishay Semiconductor
DIODE SWITCH 0.25W(1/4W) 85V SOT23-3
Multicomp
MULTICOMP BAS116+ Small Signal Diode, Single, 85V, 500mA, 1.25V, 4A New
ON Semiconductor
Sw, 75V, 250mA, 225mW, >3µs, 2pF
Diodes
DIODE SWITCH 0.25W(1/4W) 85V SOT23-3
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