| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Capacitance | 5 pF |
| Case/Package | SOT-23-3 |
| Halogen Free Status | Halogen Free |
| Output Current | ≤200 mA |
| Load Current | 0.2 A |
| Number of Positions | 3 Position |
| Forward Voltage | 1.25 V |
| Polarity | Standard |
| Power Dissipation | 385 mW |
| Thermal Resistance | 417℃/W (RθJA) |
| Reverse recovery time | 50 ns |
| Forward Current | 200 mA |
| Max Forward Surge Current (Ifsm) | 625 mA |
| Maximum Forward Voltage (Max) | 1.25 V |
| Forward Current (Max) | 200 mA |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Junction Temperature (Max) | 150 ℃ |
| Power Dissipation (Max) | 300 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
| Size-Length | 2.9 mm |
| Size-Width | 1.3 mm |
| Size-Height | 0.94 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The BAS20LT1G is a small signal Switching Diode designed for high voltage and high speed switching applications. This dual diode device contains two electrically isolated high voltage switching diodes encapsulated in a SOT-23 surface mount package.
● 120VDC Continuous reverse voltage
● AEC-Q101 qualified and PPAP capable
● Pb-free, halogen free/BFR free
ON Semiconductor
8 Pages / 0.21 MByte
ON Semiconductor
6 Pages / 0.06 MByte
ON Semiconductor
2 Pages / 0.03 MByte
ON Semiconductor
18 Pages / 0.94 MByte
ON Semiconductor
5 Pages / 0.31 MByte
ON Semiconductor
1 Pages / 0.13 MByte
ON Semiconductor
Diode Small Signal Switching 200V 0.2A 3Pin SOT-23 T/R
Leshan Radio
Rectifier Diode, 1 Element, 200V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-3
ON Semiconductor
Diode; Schottky Barrier; Switching; Vr 200VDC; If 200mA; Pkg SOT-23 (TO-236); Trr 50ns
Leshan Radio
Rectifier Diode, 1 Element, 200V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-3
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
