| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Capacitance | 5.00 pF |
| Case/Package | SOT-23-3 |
| Power Rating | 350 mW |
| Output Current | ≤250 mA |
| Breakdown Voltage | 250 V |
| Load Current | 0.25 A |
| Number of Positions | 3 Position |
| Forward Voltage | 1.25 V |
| Polarity | Standard |
| Power Dissipation | 350 mW |
| Reverse recovery time | 50 ns |
| Forward Current | 250 mA |
| Max Forward Surge Current (Ifsm) | 1 A |
| Maximum Forward Voltage (Max) | 1 V |
| Forward Current (Max) | 250 mA |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Junction Temperature | 150℃ (Max) |
| Power Dissipation (Max) | 350 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2.9 mm |
| Size-Width | 1.3 mm |
| Size-Height | 1 mm |
| Operating Temperature | -65℃ ~ 150℃ |
The BAS 21 E6327 is a silicon Switching Diode features high breakdown voltage. Suitable for high-speed switching applications.
● 350mW Total power dissipation
● 250V Breakdown voltage
● 5pF Capacitance
●Due to technical requirements, components may contain dangerous substances.
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