| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Current Rating | 2.00 µA |
| Capacitance | 2.00 pF |
| Case/Package | SOT-23-3 |
| Halogen Free Status | Halogen Free |
| Load Current | 0.1 A |
| Number of Positions | 3 Position |
| Forward Voltage | 1 V |
| Power Dissipation | 225 mW |
| Forward Current | 15 mA |
| Max Forward Surge Current (Ifsm) | 100 mA |
| Maximum Forward Voltage (Max) | 1 V |
| Forward Current (Max) | 15 mA |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Junction Temperature | -55℃ ~ 150℃ |
| Junction Temperature (Max) | 150 ℃ |
| Power Dissipation (Max) | 225 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3.04 mm |
| Size-Width | 1.4 mm |
| Size-Height | 0.94 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The BAS70-04LT1G is a dual series Schottky Barrier Diode designed for high speed switching applications, circuit protection and voltage clamping. It features extremely low forward voltage reduces conduction loss. This miniature surface mount package is excellent for hand held and portable applications, where space is limited.
● Extremely fast switching speed
● 0.75V at IF = 10mADC Low forward voltage (typ.)
● AEC Qualified and PPAP capable
● Pb-free, halogen free/BFR free
ON Semiconductor
3 Pages / 0.08 MByte
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36 Pages / 0.15 MByte
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2 Pages / 0.03 MByte
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3 Pages / 0.08 MByte
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5 Pages / 0.2 MByte
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5 Pages / 0.31 MByte
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1 Pages / 0.13 MByte
ON Semiconductor
Diode Schottky 70V 3Pin SOT-23 T/R
Leshan Radio
Dual Series Schottky Barrier Diode
ON Semiconductor
ON SEMICONDUCTOR BAS70-04LT1G Small Signal Schottky Diode, Dual Series, 70V, 15mA, 1V, 100mA, 150℃
Leshan Radio
Rectifier Diode, Schottky, 2 Element, 0.07A, 70V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-3
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