| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 70.0 V |
| Capacitance | 2.00 pF |
| Case/Package | SOT-23-3 |
| Power Rating | 350 mW |
| Breakdown Voltage | 85.0 V |
| Number of Positions | 3 Position |
| Forward Voltage | 1.25 V |
| Reverse recovery time | 1.5 µs |
| Forward Current | 200 mA |
| Max Forward Surge Current (Ifsm) | 4.5 A |
| Maximum Forward Voltage (Max) | 1.1 V |
| Forward Current (Max) | 200 mA |
| Operating Temperature (Max) | 150 ℃ |
| Power Dissipation (Max) | 330 mW |
| TYPE | DESCRIPTION |
|---|
| Packaging | Cut Tape (CT) |
| Size-Length | 2.9 mm |
| Size-Width | 1.3 mm |
| Size-Height | 1 mm |
| Operating Temperature | -65℃ ~ 150℃ |
The BAV199 from Infineon is surface mount, dual Isolated, silicon low leakage diode in SOT-23 package. These diodes are featured with medium speed switching, applicable at low leakage and switching applications.
● Automotive grade AEC-Q101 qualified
● Maximum repetitive reverse voltage of 85V
● Power dissipation is 330mW
● Operating junction temperature of 150°C
● Non repetitive peak forward surge current is 4.5A
● Forward voltage of 1.25V at IF 150mA
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