TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 70.0 V |
Capacitance | 2.00 pF |
Case/Package | SOT-23-3 |
Power Rating | 350 mW |
Breakdown Voltage | 85.0 V |
Number of Positions | 3 Position |
Forward Voltage | 1250 mV |
Power Dissipation | 330 mW |
Reverse recovery time | 1.5 µs |
Forward Current | 200 mA |
Max Forward Surge Current (Ifsm) | 4.5 A |
Maximum Forward Voltage (Max) | 1.1 V |
Forward Current (Max) | 200 mA |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | 65 ℃ |
Junction Temperature | 150℃ (Max) |
Power Dissipation (Max) | 330 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Size-Length | 2.9 mm |
Size-Width | 1.3 mm |
Size-Height | 0.9 mm |
The BAV199 from Infineon is surface mount, dual Isolated, silicon low leakage diode in SOT-23 package. These diodes are featured with medium speed switching, applicable at low leakage and switching applications.
● Automotive grade AEC-Q101 qualified
● Maximum repetitive reverse voltage of 85V
● Power dissipation is 330mW
● Operating junction temperature of 150°C
● Non repetitive peak forward surge current is 4.5A
● Forward voltage of 1.25V at IF 150mA
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