| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 70.0 V |
| Current Rating | 215 mA |
| Capacitance | 2.00 pF |
| Case/Package | SOT-23-3 |
| Forward Voltage | 1.25V @150mA |
| Reverse recovery time | 3000 ns |
| Maximum Forward Voltage (Max) | 1.25V @150mA |
| Forward Current (Max) | 0.215 A |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 300 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Cut Tape (CT) |
| Operating Temperature | -65℃ ~ 150℃ |
The switching diode is designed for high speed switching applications. This dual diode device contains two diodes in series encapsulated in a SOT-23 surface mount package.
●Features
●---
● |
● Low Leakage Current Applications
● Medium Speed Switching Times
● Available in 8 mm Tape and Reel - Use BAV199LT1 to order the 7 inch/3,000 unit reel
● Pb-Free Package is Available
● S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable
ON Semiconductor
4 Pages / 0.03 MByte
ON Semiconductor
4 Pages / 0.11 MByte
ON Semiconductor
2 Pages / 0.03 MByte
ON Semiconductor
3 Pages / 0.1 MByte
NXP
DIODE 0.16A, 85V, 2Element, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3, Signal Diode
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DIODE SWITCH 0.25W(1/4W) 85V SOT23-3
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Rectifier Diode, 2Element, 0.2A, 80V V(RRM), Silicon, ROHS COMPLIANT, SOT-23, 3Pin
Philips
Diode Switching 85V 0.16A 3Pin TO-236AB
Siemens Semiconductor
Rectifier Diode, 2Element, 0.2A, 75V V(RRM), Silicon
Leshan Radio
Rectifier Diode, 2 Element, 0.215A, 85V V(RRM), Silicon, ROHS COMPLIANT, ULTRA SMALL, PLASTIC PACKAGE-3
Nexperia
BAV199 - Low-leakage double diode TO-236 3-Pin
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