TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Frequency | 300 MHz |
Number of Pins | 3 Pin |
Case/Package | TO-18 |
Power Rating | 300 mW |
Polarity | NPN |
Power Dissipation | 300 mW |
Breakdown Voltage (Collector to Emitter) | 45 V |
hFE Min | 200 @2mA, 5V |
hFE Max | 450 |
Input Power (Max) | 300 mW |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 300 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Bulk |
Material | Silicon |
Operating Temperature | 175℃ (TJ) |
Bipolar (BJT) Transistor NPN 45V 100mA 300mW Through Hole TO-18
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9 Pages / 0.37 MByte
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