| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-18 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 600 mW |
| hFE Min | 200 |
| DC Current Gain (hFE) | 420 |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Operating Temperature | -65℃ ~ 200℃ |
The BC108C is a 25V Silicon NPN Bipolar Planar Epitaxial Transistor intended for general purpose amplifier or switches.
● Low power
● Collector-base voltage(Vcbo = 30V)
● Emitter-base voltage(Vebo = 5V)
Multicomp
3 Pages / 0.25 MByte
Multicomp
4 Pages / 0.14 MByte
Multicomp
MULTICOMP BC108 Bipolar (BJT) Single Transistor, General Purpose, NPN, 25V, 150MHz, 600mW, 200mA, 110 hFE
NXP
Trans GP BJT NPN 20V 0.1A 3Pin TO-18
Micro Electronics
NPN SILICON PLANAR EPITAXIAL TRANSISTORo
ST Microelectronics
LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS
Semelab
GENERAL PURPOSE SMALL SIGNAL NPN BIPOLAR TRANSISTOR0
Central Semiconductor
Small Signal Bipolar Transistor, 0.1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-18,
Continental Device
0.6W General Purpose NPN Metal Can Transistor. 25V Vceo, 0.2A Ic, 110 - 800 hFE.m
Diodes
200mA, 20V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18
Microsemi
Small Signal Bipolar Transistor, 0.2A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-206AA
Allegro MicroSystems
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, NPN, Silicon,
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
