TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-18 |
Number of Positions | 3 Position |
Polarity | NPN |
Power Dissipation | 600 mW |
DC Current Gain (hFE) | 800 |
Operating Temperature (Max) | 200 ℃ |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
The BC109 from Multicomp are through hole, NPN low power, silicon planar epitaxial transistors in TO-18 metal can package. This device is used for switching and amplification.
● Collector emitter voltage (Vce) of 25V
● Continuous collector current (Ic) of 200mA
● Power dissipation of 600mW
● Operating junction temperature range from -65°C to 200°C
● Collector emitter saturation voltage of 600mV at Ic=100mA
● DC current gain of 40 at Ic=10µA
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