| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 25.0 V |
| Current Rating | 100 mA |
| Case/Package | TO-226-3 |
| Power Dissipation | 350 mW |
| Breakdown Voltage (Collector to Emitter) | 25 V |
| hFE Min | 380 @2mA, 5V |
| Input Power (Max) | 350 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Bulk |
| Size-Length | 5.2 mm |
| Size-Width | 4.19 mm |
| Size-Height | 5.33 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Bipolar (BJT) Transistor NPN 25V 100mA 280MHz 350mW Through Hole TO-92-3
ON Semiconductor
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ON Semiconductor
31 Pages / 0.08 MByte
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