TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Frequency | 100 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -45.0 V |
Current Rating | -800 mA |
Case/Package | TO-226-3 |
Number of Positions | 3 Position |
Polarity | PNP |
Power Dissipation | 625 mW |
Breakdown Voltage (Collector to Emitter) | 45 V |
Continuous Collector Current | 0.8A |
hFE Min | 250 @100mA, 1V |
hFE Max | 630 |
Input Power (Max) | 625 mW |
DC Current Gain (hFE) | 170 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 625 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Bulk |
Material | Silicon |
Size-Length | 4.58 mm |
Size-Width | 3.86 mm |
Size-Height | 4.58 mm |
Operating Temperature | 150℃ (TJ) |
The BC32740BU is a PNP Epitaxial Silicon Transistor suitable for AF-driver stages, low-power output stages, switching and amplifier applications.
● Complement to BC337
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