TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Frequency | 100 MHz |
Number of Pins | 3 Pin |
Case/Package | TO-226-3 |
Number of Positions | 3 Position |
Power Dissipation | 625 mW |
Breakdown Voltage (Collector to Emitter) | 45 V |
hFE Min | 160 @100mA, 1V |
Input Power (Max) | 625 mW |
DC Current Gain (hFE) | 400 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 625 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Material | Silicon |
Size-Length | 5.2 mm |
Size-Width | 4.19 mm |
Size-Height | 5.33 mm |
Operating Temperature | 150℃ (TJ) |
The BC33725TA is a NPN Epitaxial Silicon Transistor, designed for use in general purpose amplifiers and switches applications.
● 200°C/W Thermal Resistance, Junction-to-Ambient
● Complement to BC327
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