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BC33725TAR
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BC33725TAR Datasheet PDF - ON Semiconductor

Manufacturer:ON Semiconductor
Category:BJTs
Case Package:TO-226-3
Description:Trans GP BJT NPN 45V 0.8A 3Pin TO-92 Ammo
Documentation:BC33725TAR Datasheet (7 Pages)Package Outline Dimension on4 Page5 Page
Part Numbering System on2 Page7 Page
BC33725TAR Application Note (3 Pages)
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BC33725TAR Datasheet PDF (7 Pages)
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BC33725TAR Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Frequency100 MHz
Number of Pins3 Pin
Case/PackageTO-226-3
Power Dissipation0.625 W
Breakdown Voltage (Collector to Emitter)45 V
hFE Min160 @100mA, 1V
Input Power (Max)625 mW
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)625 mW
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BC33725TAR Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
MaterialSilicon
Size-Length4.58 mm
Size-Width3.86 mm
Size-Height4.58 mm
Operating Temperature150℃ (TJ)
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BC33725TAR Documents

BC33725TAR Datasheet
ON Semiconductor
7 Pages / 0.27 MByte
BC33725TAR Other Datasheet PDF
ON Semiconductor
7 Pages / 0.29 MByte
BC33725TAR Application Note
ON Semiconductor
3 Pages / 0.02 MByte

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