TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Frequency | 100 MHz |
Number of Pins | 3 Pin |
Case/Package | TO-92-3 |
Power Dissipation | 0.625 W |
hFE Min | 250 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 625 mW |
TYPE | DESCRIPTION |
---|
Packaging | Box |
Size-Length | 5.1 mm |
Size-Width | 4.1 mm |
Size-Height | 4.7 mm |
The NPN BC337-40 A1 general purpose bipolar junction transistor, developed by Taiwan Semiconductor, is the perfect solution for your high-current density needs. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 625 mW. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V.
Taiwan Semiconductor
3 Pages / 0.23 MByte
Taiwan Semiconductor
3 Pages / 0.23 MByte
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