| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 100 MHz |
| Number of Pins | 3 Pin |
| Case/Package | TO-226-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 625 mW |
| Breakdown Voltage (Collector to Emitter) | 45 V |
| hFE Min | 250 @100mA, 1V |
| Input Power (Max) | 625 mW |
| DC Current Gain (hFE) | 170 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 625 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Material | Silicon |
| Size-Length | 5.2 mm |
| Size-Width | 4.19 mm |
| Size-Height | 5.33 mm |
| Operating Temperature | 150℃ (TJ) |
The BC33740TA is a 45V NPN Epitaxial Silicon Transistor for AF-Driver stages and low power output stages. This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500mA. It is complement to BC327/BC328 switching and amplifier. This product is general usage and suitable for many different applications.
● 5V Emitter to base voltage (VEBO)
● 200°C/W Thermal resistance, junction to ambient
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